Using a Nanonics NSOM SPM system and NSOM probes, a novel multimode scanning probe microscopy technique has been developed for simultaneous nanoscale mapping of surface morphology, photoluminescence (PL), PL dynamics, spectra in illumination, illumination-collection mode, and carrier transport and its anisotropy. All of this data can be obtained in one scan.
In this study, ambipolar carrier diffusion in an m-plane InGaN/GaN quantum well was studied using this new method. Obtained results showed high anisotropic carrier diffusion.
